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Numerical Analysis of Transient Capacitance Data Obtained from Titanium Induced Levels in Silicon

Published online by Cambridge University Press:  25 February 2011

E. Courcelle ,
A. Mesli  and
P. Siffert
E. Courcelle
Affiliation:
CRN, Laboratoire PHASE, B.P. 20, F-67037 Strasbourg Cedex (France).
A. Mesli
Affiliation:
CRN, Laboratoire PHASE, B.P. 20, F-67037 Strasbourg Cedex (France).
P. Siffert
Affiliation:
CRN, Laboratoire PHASE, B.P. 20, F-67037 Strasbourg Cedex (France).
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Abstract

Using electrical and optical DLTS analysis based on the capacitance transient measurements and taking into account the spatially dependent capture and the competition between emission and capture, parameters of Titanium levels in silicon are derived. By curve fitting the calculation to trap-filling data, the electron capture cross section of the first donor level (Ec - .284 eV) is found to be 5.8 10-15 exp (.013/kT)cm2 at ξ= 5 104 V/cm. The hole trap capture cross section of the second donor level (Ev + .260 eV) is found to be 1.97 10-17exp (-.017/kT)cm2 at zero electric field.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 355
Copyright
Copyright © Materials Research Society 1986

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