Hostname: page-component-6dbcb7884d-g628x Total loading time: 0 Render date: 2025-02-13T20:32:13.122Z Has data issue: false hasContentIssue false
  • English
  • Français

Nucleation of Dislocations in Strained Epitaxial Layers

Published online by Cambridge University Press:  25 February 2011

Eric P. Kvam
Eric P. Kvam*
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
Get access

Abstract

The introduction of dislocations into initially dislocation free strained epitaxial layers is examined. Examples are given of several different sources of dislocations, and the influence of these upon the final microstructure is shown. The sources most prevalent appear to be growth defects in epilayers with strains less than about 0.01, and topography-induced surface nucleated half-loops at strains greater than about 0.02.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 447
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Merwe, J.H. van der, J. Appl. Phys. 34(1), 123 (1963).Google Scholar
2. Matthews, J.W., Phil. Mag. 13, 1207, (1966).Google Scholar
3. Willis, J.R., Jain, S.C., and Bullough, R., Phil. Mag. A62(1), 115 (1990).Google Scholar
4 Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S., and Robinson, I.K., J. Vac. Sci. Tech. A2, 436, (1984).Google Scholar
5. Fiory, A.T., Bean, J.C., Hull, R., and Nakahara, S., Phys. Rev. B31, 4063, (1985).Google Scholar
6. Orders, P.J. and Usher, B.I., Appl. Phys. Lett. 50, 980, (1987).Google Scholar
7. People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985); ibid 49, 229, (1987).Google Scholar
8. Fritz, I.J., Gourley, P.L. and Dawson, L.R., Appl. Phys. Lett. 51(13), 1004 (1987).Google Scholar
9. Gourley, P.L., Fritz, I.J., and Dawson, L.R., Appl. Phys. Lett. 52(5), 377 (1988).Google Scholar
10. Eaglesham, D.J., Kvam, E.P., Maher, D.M., Humphreys, C.J., Green, G.S., Tanner, B.K., and Bean, J. C., Appl. Phys. Lett. 53(21), 2083 (1988).Google Scholar
11. Houghton, D. C., Perovic, D. D., Baribean, J.-M., and Weatherly, G. C., J. Appl. Phys. 67(4), 1850 (1990).Google Scholar
12. Alexander, H. and Haasen, P., “Solid State Physics” (Acad. Press, NY, 1968), vol. 22.Google Scholar
13. Hull, R., Bean, J.C., Werder, D.J. and Liebenguth, R.E., Phys. Rev. B40, 1681, (1989).Google Scholar
14. Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51(17), 1325 (1987).Google Scholar
15. Hull, R. and Bean, J.C., MRS Symp. Proc. Vol. 160, p. 23 (1990).Google Scholar
16. Houghton, D.C. and Rowell, N.L., MRS Symp. Proc. Vol. 198 (1990).Google Scholar
17. Nandekar, A.S. and Narayan, J., Phil. Mag. A 56, 625, (1987).Google Scholar
18. Hirth, J.P. and Lothe, J., Theory of Dislocations, (Wiley, New York, 1982), p. 169.Google Scholar
19. Frank, F.C., Procedings of the Symposium on the Plastic Deformation of Crystalline Solids, (Pittsburgh, PA, Carnegie Institute of Technology, 1950), p. 89.Google Scholar
20. Hirth, J.P., Relation between Structure and Strength in Metals and Alloys, (H.M.S.O., London, 1963), p. 218.Google Scholar
21. Eaglesham, D.J., Kvam, E.P., Maher, D.M., Humphreys, C.J., and Bean, J.C., Phil. Mag. A 59(5), 1059 (1989).Google Scholar
22. Stranski, I.N. and Krastanov, Von L., Akad. Wiss. Lit. Mainz Math.-Natur. Kl. lib 146, 797, (1939).Google Scholar
23. Eaglesham, D.J. and Cerullo, M., Phil. Mag. Lett. 64(16), 1943 (1990).Google Scholar
24. Tkhorik, Yu.A., Electrotekh. Cas. 37(12) 857 (1986).Google Scholar
25. Arias, N.A., Konakova, R.V., Lidai, I., Matveeva, L.A., Tkhorik, Yu.A., Khazan, L.S., Kharman, R., Shilder, Ya., Optoelektron. Poluprovodn. Tekh., #11, 26, (1987).Google Scholar
26. Hull, R. and Bean, J.C., J. Vac. Sci. Tech. A 7, 2580, (1989).Google Scholar
27. Kvam, E.P., Maher, D.M., and Humphreys, C.J., J. Mater. Sci. 5(9), 1900 (1990).Google Scholar
28. Chang, K.H., Bhattacharya, P.K., and Gibala, R., J. Appl. Phys. 66(7), 2993 (1989).Google Scholar
29. Yao, J.Y., Andersson, T.G., and Dunlop, G.L., J. Appl. Phys. 69(4), 2224 (1991).Google Scholar
30. Kvam, E.P., in Proc. XII Intenational Conf. on Electron Microscopy, Vol. 4, ed. Peachey, L.D. & Williams, D.B. (San Francisco Press, 1990) p. 560 Seattle, WA, Aug. 1990.Google Scholar
31. Kanaya, H., Fujii, K., Cho, Y., Kumagi, Y., Hasegawa, F., and Yamaka, E., Japan. J. Appl. Phys. 29(12), L2143 (1990).Google Scholar
32. Waddill, G.D., Vitomirov, J.M., Aldao, C.M., and Weaver, J.H., Phys. Rev. Lett. 62, 1568, (1989).Google Scholar
33. Salisbury, I.G., Acta Met. 30(3), 627 (1982).Google Scholar
34. Hull, R., Bean, J.C., Bonar, J.M., Higashi, G.S., Short, K.T., Temkin, H., and White, A.E., Appl. Phys. Lett. 56(24), 2445 (1990).Google Scholar
35. Kvam, E.P. and Namavar, F., Appl. Phys. Lett. 58(21), in press (1991).Google Scholar
36. Tuppen, C.G., Gibbings, C.J., and Hockley, M., J. Cryst. Gr. 94, 392, (1989).Google Scholar
37. Tuppen, C.G., Gibbings, C.J., and Hockly, M., Appl. Phys. Lett. 54(2), 148 (1989).Google Scholar
38. Rudder, R.A., Hattangady, S.V., Posthil, J.B., and Markunas, R.J., MRS Symp. Proc. Vol. 116, p. 529 (1988).Google Scholar
39. Washburn, J., Kvam, E.P., and Liliental-Weber, Z., J. Electron. Mat. 20(2), 155 (1991).Google Scholar
40. Chrenko, R.M., Hall, E.L., Lewis, N., and Smith, G.A., MRS Symp. Proc. Vol. 82, p. 373 (1987).Google Scholar
41. Perovich, D.D., Weatherly, G.C., Baribeau, J.-M., and Houghton, D.C., Thin Solid Films 183, 141, (1989).Google Scholar
42. Beanland, R. and Salisbury, I.G., Priv. Comm.Google Scholar
43. Kvam, E.P., Phil. Mag. Lett. 62(3), 167 (1990).Google Scholar
44. Fitzgerald, E.A., Kirchner, P.D., Proano, R., Pettit, G.D., Woodall, J.M., and Ast, D.G., Appl. Phys. Lett. 52(18), 1496 (1988).Google Scholar
45. Fitzgerald, E.A., Watson, G.P., Proano, R.E., Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodall, J.M., J. Appl. Phys. 65(6), 2220 (1989).Google Scholar
46. Fitzgerald, E.A., Xie, Y.-H., Brasen, D., Green, M.L., Michel, J., Freeland, P.E., and Weir, B.E., J. Electron. Mat. 19(9), 949 (1990).Google Scholar
47. Hagen, W. and Strunk, H., Appl. Phys. 18, 67, (1978).Google Scholar
48. Tuppen, C.G., Gibbings, C.J., Hockly, M., and Roberts, S.G., Appl. Phys. Lett. 56(1), 54 (1990).Google Scholar
49. Washburn, J. and Kvam, E.P., Appl. Phys. Lett. 57(16), 1637 (1990).Google Scholar
50. Lefebvre, A., Herbeaux, C., Boullet, C., and DiPersio, J., Phil. Mag. Lett. 63(1), 23 (1991)Google Scholar
51. Hull, R., Bean, J.C., Eaglesham, D.J., Bonar, J.M., and Buescher, C., Thin Solid Films 183, 117 (1989)Google Scholar
52. Nix, W.D., TMS Annual Meeting, Anaheim, 1990 Google Scholar