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Nucleation & Growth of Octahedral Oxide Particles in Silicon: Oxygen Ion Implantation

Published online by Cambridge University Press:  28 February 2011

R. W. Carpenter ,
G. Vanderschaeve ,
C. J. Varkera  and
S. R. Wilson
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287.
G. Vanderschaeve
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287. Laboratory for Structure & Properties of the Solid State, Universite des Sciences et Techniques de Lille, Villeneuve d'Ascq 59655, France.
C. J. Varkera
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287.
S. R. Wilson
Affiliation:
Motorola Semiconductor Research and Development Laboratories, Phoenix, AZ 85008.
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Abstract

Czochralski silicon was implanted with oxygen at 0.4 and 3.5MeV to obtain concentrations near 1020 oxygen/cm3 in the implanted region. Following implantation the wafers were aged at about 1000°C for 7 hours, and the resulting precipitates were examined by HREM. A high density of octahedral SiOx precipitates (∼1015/cm3) was the dominant morphology. Plate type precipitates and dislocations were also present at lower density. The data indicate octahedra grow from the plates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 309
Copyright
Copyright © Materials Research Society 1986

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References

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