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The Nucleation and Growth of Germanium on (1102) Sapphire Deposited by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

David J. Godbey  and
Mark E. Twigg
David J. Godbey
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division Code.6816, Washington, D.C. 20375-5000
Mark E. Twigg
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division Code.6816, Washington, D.C. 20375-5000
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Extract

Single crystal undoped germanium has been grown successfully for the first time on (1102) sapphire [1,2]. Germanium was found to grow (110) with an in plane registry of Ge(111)/Al203(1012) [1]. When a 2μm germanium film was grown on (1102) sapphire at 800°C and after a substrate preanneal of 1400°C, the X-ray line width of the Ge(220) reflection was measured to be 230 arcseconds [2]. Strain was observed only in germanium films that were thinner than 40 nm [2].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 505
Copyright
Copyright © Materials Research Society 1990

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References

1Godbey, D.J., Qadri, S.B., Twigg, M.E., and Richmond, E.D.. Appl. Phys. Lett., 54, 2449, (1989).Google Scholar
2Godbey, D.J., Qadri, S.B., Twigg, M.E., and Richmond, E.D.. Thin Solid Films, 182, In press, (1989).Google Scholar
3Twigg, M.E. and Richmond, E.D.. J. Appl. Phys., 64, 3037, (1988).Google Scholar
4Chang, C.C.. J. Vac. Sci. Technol., 8, 500, (1971).Google Scholar
5Kim, Y. and Hsu, T.. Proceedings of the 47th Annual Meeting of the Electron Microscopy Society of America, page~546, San Antonio, Texas, (1989).Google Scholar
6Abrahams, M.S., Buiocchi, C.J., Smith, R.T., Corboy, J.F., Blanc, J., and Cullen, G.W.. J. Appl. Phys., 47, 5139, (1976).Google Scholar
7Blanc, J. and Abrahams, M.S.. J. Appl. Phys., 47, 5151, (1976).Google Scholar