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Near Infrared Response of Amorphous Silicon Detector Grown with Microcompensated Absorber Layer

Published online by Cambridge University Press:  15 February 2011

D. Caputo ,
G. De Cesare ,
A. Nascetti ,
F. Palma  and
M. Tucci
D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
G. De Cesare
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
A. Nascetti
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
F. Palma
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Rome, Italy
M. Tucci
Affiliation:
ENEA, Research Centre, Localit. Granatello, 80055, Portici, Napoli, Italy
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Abstract

In this work we demonstrate that radiation up to 2 μm induces photocurrent in a single junction amorphous silicon structure at room temperature. The absorber layer is a microcompensated film deposited using very low concentrations of dopant species. Device operation is based on optical excitation of thermal generated carriers from trap states toward valence and conduction band in the high electric field region of the structure. Transient and frequency response under different bias voltages and illuminations conditions are presented. The possibility to use the infrared sensor in low bit rate communication systems has been demostrated by including our detector in a front-end system and measuring its frequency responce.

Quantum efficiency measurement have been reproduced with a numerical model, able to take into account sub-band gap absorption into single films. Model results indicate the presence of a large valence band tail and a high number of dangling bonds and shallow defects ascribed to the presence of dopant atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 839
Copyright
Copyright © Materials Research Society 1999

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