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Multifunctional Optical In Situ Monitoring of Semiconductor Film Growth

Published online by Cambridge University Press:  10 February 2011

K. A. Bertness ,
S. P. Hays  and
R. K. Hickernell
K. A. Bertness
Affiliation:
National Institute of Standards and Technology, Optoelectronics Division, Mailstop 815.04, 325 Broadway, Boulder, CO 80303, bertness@boulder.nist.gov
S. P. Hays
Affiliation:
National Institute of Standards and Technology, Optoelectronics Division, Mailstop 815.04, 325 Broadway, Boulder, CO 80303
R. K. Hickernell
Affiliation:
National Institute of Standards and Technology, Optoelectronics Division, Mailstop 815.04, 325 Broadway, Boulder, CO 80303
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Abstract

We have modified a normal-incidence optical reflectance spectroscopy system to allow rapid switching between the measurement of sample reflectance and sample emission. The resulting optical system is capable of “smart” pyrometry, in which sample emissivity is measured rather than assumed. The emissivity measurement makes use of the principle of detailed balance, which states that for specular, opaque samples, the sum of the emissivity and reflectance at each wavelength is equal to 1. We present data based on multilayer III-V semiconductor structures grown by molecular beam epitaxy, but the optical system would function equally well in any growth or deposition system with optical access to the substrate. The “smart” pyrometry temperatures we measure typically differs from conventional pyrometry by 5 to 10°C, and occasionally as much as 20°C, for multilayer structures of AIGaAs and GaAs. We present details of the optical components and arrangement that minimize the effect of sample wobble and allow the system operator regular visual access to the sample. Calibration techniques for the combined system are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 157
Copyright
Copyright © Materials Research Society 1999

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References

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