Hostname: page-component-6dbcb7884d-wnk8j Total loading time: 0 Render date: 2025-02-14T03:04:06.255Z Has data issue: false hasContentIssue false
  • English
  • Français

Multi-Cycling of Staebler-Wronski Effect

Published online by Cambridge University Press:  21 February 2011

Kong Guangling  and
Sun Guosheng
Kong Guangling
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Sun Guosheng
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Get access

Abstract

The effect of illumination/annealing multi-cycling treatment on the dark and photo conductivities of undoped a-Si:H film has been investigated. With the increase of cycling number the conductivities in annealed state and light-soaked state are drawn close to each other, which provides a unique irreversible effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 485
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292(1977).Google Scholar
2. Jackson, W.B. and Stutzmann, M., Appl. Phys. Lett. 49, 957(1986).Google Scholar
3. Kumeda, M., Yokomichl, H., Morimoto, A., and Shimizu, T., Jpn. J. Appl. Phys. Lett. 25, L654 (1986).Google Scholar
4. Nevin, W.A., Yamagishi, H., and Tawada, Y., Appl. Phys. Lett. 54, 1226 (1989).Google Scholar
5. Kong, G.L. and Sun, G.S., (to be published).Google Scholar