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Morphological transition of Ge islands on Si(001) grown by LPCVD

Published online by Cambridge University Press:  10 February 2011

M. Goryll ,
L. Vescan  and
H. Lüth
M. Goryll
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
L. Vescan
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Hut- and dome-shaped islands have been observed during low-pressure vapour phase epitaxy (LPVPE) of Ge on Si(001) at 700°C. The experiments show that a coarsening process occurs in connection with the deposition process, leading to an island height increase with increasing deposition time (total Ge-coverage was kept constant). The shape transition from huts to domes, which takes place after hut clusters have reached a baselength of 80nm, indicates that huts are not a stable configuration. Photoluminescence measurements show a linear correlation between hut cluster density and integrated photoluminescence intensity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 205
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Tomitori, M., Watanabe, K., Kobayashi, M., and Nishikawa, O., Appl. Surf. Sci. 76/77, 322 (1994).Google Scholar
[2] Kamins, T. I., Carr, E. C., Williams, R. S., and Rosner, S. J., J. Appl. Phys. 81, 211 (1997).Google Scholar
[3] Medeiros-Ribeiro, G. et al. , Science 279, 353 (1998).Google Scholar
[4] Ross, F. M., Tersoff, J., and Tromp, R. M., Phys. Rev. Lett. 80, 984 (1998).Google Scholar
[5] Floro, J. A. et al. , Phys. Rev. Lett. 80, 4717 (1998).Google Scholar
[6] Capellini, G., Gaspare, L. D., Evangelisti, F., and Palange, E., Appl. Phys. Lett. 70. 493 (1997).Google Scholar
[7] Goryll, M. et al. , Appl. Phys. Lett. 71, 410 (1997).Google Scholar
[8] Mo, Y.-W., Savage, D. E., Swartzentruber, B. S., and Lagally, M. G., Phys. Rev. Lett. 65, 1020 (1990).Google Scholar
[9] Voigtlhnder, B. and Zinner, A., Appl. Phys. Lett. 63, 3055 (1993).Google Scholar
[10] Eaglesham, D. J. and Cerullo, M., Phys. Rev. Lett. 64, 1943 (1990).Google Scholar
[11] Goryll, M., Vescan, L., and Liith, H., Thin Solid Films 336, 244 (1998).Google Scholar
[12] Apetz, R. et al., Appl. Phys. Lett. 66, 445 (1995).Google Scholar
[13] Vescan, L. and Stoica, T., to be published in J. of Luminescence (1999).Google Scholar
[14] Sutter, P., Mateeva, E., and Lagally, M. G., J. Vac. Sci. Technol. B 16, 1560 (1998); E. Mateeva, P. Sutter, J.C. Bean and M. G. Lagally, Appl. Phys. Lett. 71, 3233 (1997).Google Scholar