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Monitoring Silicon Quality From Diffusion Furnaces Using In-Line Measurements

Published online by Cambridge University Press:  10 February 2011

Matt Stoker ,
Kelvin Catmull ,
Greg Horner  and
Brian Letherer
Matt Stoker
Affiliation:
Motorola MOS 12, 1300 N. Alma School Rd., Chandler, AZ 85224
Kelvin Catmull
Affiliation:
Motorola MOS 12, 1300 N. Alma School Rd., Chandler, AZ 85224
Greg Horner
Affiliation:
KLA-Tencor Corp., One Technology Drive, Milpitis, CA 95035
Brian Letherer
Affiliation:
KLA-Tencor Corp., One Technology Drive, Milpitis, CA 95035
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Abstract

Carrier lifetimes provide an excellent indication of the concentration of impurities and defects in semiconducting materials. This paper describes a non-contact technique for measuring generation and recombination lifetimes. This technique, which is incorporated into the KLATencor Quantox system, provides a highly sensitive method for monitoring the formation of defects or incorporation of impurities in silicon wafers during processing. Several applications of these measurements are investigated, such as monitoring the effects of various thermal cycles on the formation of a high-lifetime denuded zone near the wafer surface and monitoring diffusion furnace contamination after a quartz change.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 591 , 1999 , 219
Copyright
Copyright © Materials Research Society 2000

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References

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