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Modification of Sol-Gel Thin Films By IonImplantation

Published online by Cambridge University Press:  21 February 2011

Hiroshi Hirashima ,
Kenji Adachi  and
Hiroaki Imai
Hiroshi Hirashima
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
Kenji Adachi
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
Hiroaki Imai
Affiliation:
Keio University, Faculty of Science and Technology 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, 223 Japan
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Abstract

In order to densify and to improve the physical properties, TiO2sol-gel films, about 100 nm in thickness, on silica glass or silicon waferwere implanted with Ar+ or B+ ions. The refractiveindex of the as-dried films increased and the IR absorption band of OHdisappeared after Ar+ implantation. Drying and densification ofsol-gel films were enhanced by Ar+ implantation. On the otherhand, the refractive index and the thickness of the films hardly changedwith B+ implantation. However, IR absorption bands of B-O bondwere observed after B+ implantation. This suggests that sol-gelfilms could be chemically modified by ion implantation with reactive ionspecies.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 346: Symposium N – Better Ceramics Through Chemistry VI , 1994 , 183
Copyright
Copyright © Materials Research Society 1998

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References

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