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Model of Hydrogen-Mediated Metastable Changes in a Two-Domain Amorphous Silicon Network

Published online by Cambridge University Press:  17 March 2011

Jonathan Baugh  and
Daxing Han
Jonathan Baugh
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina at Chapel Hill Chapel Hill, NC 27599-3255
Daxing Han
Affiliation:
Dept. of Physics and Astronomy, University of North Carolina at Chapel Hill Chapel Hill, NC 27599-3255
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Abstract

A phenomenological model for the light-induced metastability of a-Si:H is proposed in which a two-domain model of the amorphous network plays a central role. Boundaries between high and low density domains are associated with a significant fraction of the clustered Si-H in aSi:H. Weakly bonded hydrogen at these boundaries catalyzes metastable local configuration changes in the Si network due to non-radiative carrier recombination, leading qualitatively to both the gross structural changes and the increase in electronic defect density that are observed experimentally.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A19.1
Copyright
Copyright © Materials Research Society 2001

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References

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