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Mocvd SrS:Ce for Applications in Electroluminescent Devices

Published online by Cambridge University Press:  10 February 2011

D. Endisch ,
K. Barth ,
J. Lau ,
G. Peterson ,
A. E. Kaloyeros ,
D. Tuenge  and
C. N. King
D. Endisch
Affiliation:
New York State Center for Advanced Thin Film Technology, University at Albany, SUNY
K. Barth
Affiliation:
New York State Center for Advanced Thin Film Technology, University at Albany, SUNY
J. Lau
Affiliation:
New York State Center for Advanced Thin Film Technology, University at Albany, SUNY
G. Peterson
Affiliation:
New York State Center for Advanced Thin Film Technology, University at Albany, SUNY
A. E. Kaloyeros
Affiliation:
New York State Center for Advanced Thin Film Technology, University at Albany, SUNY
D. Tuenge
Affiliation:
Planar America, Inc.
C. N. King
Affiliation:
Planar America, Inc.
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Abstract

SrS:Ce is an important material for full color electroluminescent (EL) flat panel displays. Using a combination of SrS:Ce/ZnS:Mn and appropriate color filters high quality full color displays have been demonstrated [1]. Major issues for commercially viable process integration of SrS:Ce are the combination of high luminance, high growth rate, and process temperatures below 600°C for compatibility with low cost glass substrates. This work describes the process development and optimization of metal-organic chemical vapor deposition (MOCVD) of SrS:Ce. MOCVD is a promising candidate for deposition of SrS:Ce because it can provide the required growth rates and allows control of crystal structure and stoichiometry. Growth of SrS:Ce was performed in the temperature range from 400°C to 530°C using Sr(tmhd)2, Ce(tmhd)4, and H2S as precursors. The structure of the SrS:Ce was found to be strongly dependent on the H2S flow. A brightness of 15 fL and an efficiency of 0.22 lm/W has been achieved (40 V above threshold voltage, 60 Hz AC). Film analysis included Rutherford backscattering (RBS), X-ray diffraction (XRD), atomic force microscopy (AFM), and EL measurements. Results on the correlation between process parameters, film structure, grain size and EL performance will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 269
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Aguilera, M. and Aitchison, B., Solid State Technol., Nov. 1996, p. 109.Google Scholar
2. Mach, R. and Mueller, G.O., Semicond. Sci. Technol. 6, p. 305 (1991).Google Scholar
3. King, C.N., J. Soc. Inform. Disp. 4/1, p. 1 (1996).Google Scholar
4. Barrow, W.A., Coovert, R.E., and King, C.N., SID Intl. Symp. Digest of Technical Papers, p. 249(1984).Google Scholar
5. Okamoto, S. and Nakazawa, E., Jpn. J. Appl. Phys. 34, p. 521 (1995).Google Scholar
6. Ohmi, K., Fujimoto, K., Tanaka, S., and Kobayashi, H., J. Appl. Phys. 78, p. 428 (1995).Google Scholar
7. Lee, Y.H., Kim, D.H., Ju, B.K., Yeom, T.H., Hahn, T.S., Oh, M.H., and Choh, S.H., J. Cryst. Growth, 147, p. 326(1995).Google Scholar
8. Mauch, R.H., Velthaus, K.O., Hütl, B., Troppenz, U., and Hermann, R., SID Int. Symp. Digest of Technical Papers, p. 720 (1995).Google Scholar
9. Samuels, J.A., Smith, D.C., Sieblein, K.N., Salazar, K., Tuenge, R.T., Schaus, C.F., King, C.N., Le, H., Hitt, J., Thuemler, R.L., and Wager, J.F., Mat. Res. Soc. Symp. Proc. 415, 15 (1996).Google Scholar
10. Chu, W.K., Mayer, J.W., and Nicolet, M.-A., Backscattering Spectrometry (Academic Press, New York, 1978).Google Scholar
11. Doolittle, L.R., Nucl. Instr. Meth. B9, p. 344 (1985).Google Scholar