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Mocvd of Copper from New and Liquid Precursors (hfac)CuL, Where L = 1-Pentene, Atms, and Vtmos

Published online by Cambridge University Press:  15 February 2011

H. K. Shin ,
H. J. Shin ,
S. J. Lim ,
D. J. Yoo ,
N. Y. Oh ,
H. J. Yoo ,
J. T. Baek ,
C. H. Jun  and
Y. T. Kim
H. K. Shin
Affiliation:
Ultra Pure Chemical Inc., 320-5, WonchunDong PaldalGu, SUWON, Kyungkido, KOREA 442-380, upchem@soback.kornet.nm.kr
H. J. Shin
Affiliation:
Ultra Pure Chemical Inc., 320-5, WonchunDong PaldalGu, SUWON, Kyungkido, KOREA 442-380, upchem@soback.kornet.nm.kr
S. J. Lim
Affiliation:
Ultra Pure Chemical Inc., 320-5, WonchunDong PaldalGu, SUWON, Kyungkido, KOREA 442-380, upchem@soback.kornet.nm.kr
D. J. Yoo
Affiliation:
Ultra Pure Chemical Inc., 320-5, WonchunDong PaldalGu, SUWON, Kyungkido, KOREA 442-380, upchem@soback.kornet.nm.kr
N. Y. Oh
Affiliation:
Young Dong High School, 72-7, KyesanRi YoungdongEwp, YoungdongKun, Chungbuk, KOREA 370-800
H. J. Yoo
Affiliation:
Electronics and Telecommunications Research Institute, P.O. BOX 106, Yusong, Taejon, KOREA
J. T. Baek
Affiliation:
Electronics and Telecommunications Research Institute, P.O. BOX 106, Yusong, Taejon, KOREA
C. H. Jun
Affiliation:
Electronics and Telecommunications Research Institute, P.O. BOX 106, Yusong, Taejon, KOREA
Y. T. Kim
Affiliation:
Electronics and Telecommunications Research Institute, P.O. BOX 106, Yusong, Taejon, KOREA
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Abstract

Liquid and volatile (hfac)CuL compounds where hfac = 1,1,1,5,5,5-hexafluoro- 2,4-pentanedionate and L = 1-pentene (1), acetyltrimethylsilane (2), and vinyltri- methoxysilane (3) were newly developed for reproducible copper deposition. During CVD processes, no premature decomposition of the precursor was observed in the source reservoir that contained the mixture of (hfac)CuL and excess free ligand L. Pure Cu films were deposited in the deposition temperature range 180°C ˜ 220°C

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 219
Copyright
Copyright © Materials Research Society 1996

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