Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-02-05T17:05:59.786Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructures of Tungsten Suicide Films Deposited by CVD and by Sputtering

Published online by Cambridge University Press:  21 February 2011

Young-Wug Kim ,
Nae-In Lee  and
Moon-Han Park
Young-Wug Kim
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Kiheung-Eup, Korea
Nae-In Lee
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Kiheung-Eup, Korea
Moon-Han Park
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co., Ltd., Kiheung-Eup, Korea
Get access

Abstract

Microstructure changes, after annealing, of tungsten suicide (WSiϰ) films formed on the polysilicon films by CVD (chemical vapor deposition) and by sputtering were compared. For both CVD and sputtered WSiϰ films, microstructural evolutions during annealing were caused by three mechanisms; crystallization from amorphous phase, stoichiometrical change, and grain growth. The microstructures and the electrical resistances of WSiϰ films after annealing were depended on the deposition method. The movement of excess Si in WSiϰ film to poly-silicon during annealing was faster in case of sputtering than in case of CVD. At annealing temperature below 850°C, CVD films showed higher resistivity and smaller grain size than sputtered films. On the other hand, at anneal temperature above 850°C, the grain growth rate of the CVD film was higher than that of the sputtered film, and the CVD film resulted in lower resistivity than the sputtered film. The retardation of grain growth for the sputter-WSiϰ film is thought to be caused by impurity contamination such as argon added into the film during sputtering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 491
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Mohammadi, F., Saraswat, K.C., and Meindl, J.D., Appl. Phys. Lett. 35, 529 (1979)Google Scholar
[2] Mohammadi, F. and Saraswat, K.C., J. Electrochem. Soc. 127, 450 (1980)Google Scholar
[3] Murarka, S.P., Read, M.H., and Chang, C.C., J. Appl. Phys. 52, 7450 (1981)Google Scholar
[4] Brors, D.L., Fair, J.A., Monnig, K.A., and Saraswat, K.C., Solid State Technol. 26, 183 (1983)Google Scholar
[5] Saraswat, K.C., Brors, D.L., Fair, J.A., Monnig, K.A., and Beyers, R., IEEE Trans. Electron. Devices ED-30, 1497 (1983)Google Scholar
[6] Kottke, M., Pintchovski, F., White, T.R., and Tobin, P.J., J. Appl. Phys. 60, 2835 (1986)Google Scholar
[7] Shioya, Y., Itoh, T., Inoue, S., and Maeda, M., J. Appl. Phys. 58, 4194 (1985)Google Scholar
[8] Deal, M.D., Pramanik, D., Saxena, A. N., and Saraswat, K.C., Proc. VMIC, 324 (1985)Google Scholar
[9] Shioya, S., Kawamura, S., Kobayashi, I., Maeda, M., and Yanagida, K., J. Appl. Phys. 61, 5102 (1987)Google Scholar
[10] Williams, R. and Woods, M.H., J. Appl. Phys. 46, 695 (1975)Google Scholar
[11] Wright, P.J. and Saraswat, K.C., IEEE Trans. Electron Devices 36, 879 (1989)Google Scholar