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A Microstructural Study of Reaction-Bonded Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

K. Das Chowdhury ,
R. W. Carpenter  and
W. Braue
K. Das Chowdhury
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ
W. Braue
Affiliation:
German Aerospace Research Establishment, D5000, Cologne, Germany
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Abstract

Interfaces in Reaction Bonded Silicon Carbide (RBSC) have been characterized by Analytical and High Resolution Electron Microscopy. Both Si/SiC and SiC/SiC interfaces were free of any oxygen impurity segregation, but contained metallic impurity precipitates. Oxygen was detected in the second phase particles in the SiC grains. A model is presented to explain the evolution of these second phase particles in the SiC grains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 295: Symposium W – Atomic-Scale Imaging of Surfaces and Interfaces , 1992 , 183
Copyright
Copyright © Materials Research Society 1993

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