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Micro-Raman Characterization of Arsenic-Implanted Silicon: Interpretation of the Spectra

Published online by Cambridge University Press:  10 February 2011

James P. Lavine  and
David D. Tuschel
James P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company Rochester, NY 14650–2008
David D. Tuschel
Affiliation:
Imaging Research and Advanced Development, Eastman Kodak Company Rochester, NY 14650–2017
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Abstract

Raman spectra were measured on arsenic-implanted silicon with micro-Raman spectroscopy in the backscattering mode and with macro-Raman spectroscopy. A peak is observed between 505 and 510 cm−1 with 488 and 514.5 nm excitation. This peak and a related peak from the substrate at about 520 cm−1 are seen in selected regions of the implanted samples when the implant dose is above 2 × 1014 As/cm2. These features may be due to a long room temperature anneal, as they are absent in recently prepared samples. Possible explanations for the features are presented.

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