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Mechanical-Stress-Controlled Silicide Interconnections for Highly Reliable Semiconductor Devices

Published online by Cambridge University Press:  01 February 2011

Hiromi Shimazu  and
Hideo Miura
Hiromi Shimazu
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd. 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
Hideo Miura
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd. 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
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Abstract

Mechanical stress develops in silicide interconnection structures due to the volumetric shrinkage of newly grown silicide film during silicidation. Silicidation-induced stress of about 1 GPa was measured by inducing a reaction between a silicon wafer and a titanium film deposited on the wafer. The stress developed near the interface between the grown silicide film. The remaining silicon was analyzed using a finite-element method. The critical stress for delamination at the interface was determined by comparing the results of the estimated stress at the interface with the cross-sectional observation results of different interconnection-structures test samples. We also determined the critical thickness of TiSi2 and the diameter of silicide contacts for eliminating delamination at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B13.5
Copyright
Copyright © Materials Research Society 2002

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References

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