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Mask-Induced Strain in Gaas Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth

Published online by Cambridge University Press:  10 February 2011

Z.R. Zytkiewicz ,
J. Domagala  and
D. Dobosz
Z.R. Zytkiewicz
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland E-mail: zytkie@ifpan.edu.pl
J. Domagala
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
D. Dobosz
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
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Abstract

X-ray diffraction has been used to study the mask-induced strain in GaAs layers grown by the liquid phase epitaxial lateral overgrowth (ELO) on (100) GaAs substrates. SiO2 mask has been investigated to produce seeding areas for the ELO growth. It has been found that SiO2 attracts the ELO layers, which leads to their pronounced bending towards the oxide film and to the appearance of vertical strain in laterally grown parts of ELO. When SiO2 is removed by selective etching this strain disappears. We show evidence that the bending of ELO layers is reduced when the density of substrate dislocations is increased. This is explained as being due to enhancement of the initial vertical growth rate by dislocations supplying steps on the upper surface of ELO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 273
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Jastrzebski, L., Corboy, J.F., and Soydan, R., J. Electrochem. Soc. 136, p. 3506 (1989), and references therein.Google Scholar
[2] Tsaur, B.Y., McClelland, R.W., Fan, J.C.C., Gale, R.P., Salerno, J.P., Vojak, B.A., and Bozler, C.O., Appl. Phys. Lett., 41, p. 347 (1982).Google Scholar
[3] Nishinaga, T., Cryst. Prop. and Prep., 31, p. 92 (1991).Google Scholar
[4] Hanson, P.O., Gustafsson, A., Albrecht, M., Bergmann, R., Strunk, H.P., and Bauser, E., J. Cryst. Growth 121, p. 790 (1992).Google Scholar
[5] Zheleva, T.S., Nam, O.H., Bremser, M.D., and Davis, R.F., Appl. Phys. Lett., 71, p. 2472 (1997).Google Scholar
[6] Zytkiewicz, Z.R., Cryst. Res. Technol., 34, p. 573 (1999).Google Scholar
[7] Zytkiewicz, Z.R., Dobosz, D., and Pawlowska, M., Semicond. Sci. Technol., 14, p. 465 (1999).Google Scholar
[8] Rantamdki, R., Tuomi, T., Zytkiewicz, Z.R., Dobosz, D., and McNally, P.J., J. Phys. D: Appl. Phys., 32 (1999) – at press.Google Scholar
[9] Raidt, H., Kbhler, R., Banhart, F., Jenichen, B., Gutjahr, A., Konuma, M., Silier, I., and Bauser, E., J. Appl. Phys., 80, p. 4101 (1996).Google Scholar
[10] Köhler, R., Jenichen, B., Raidt, H., Bauser, E., and Nagel, N., J. Phys. D 28, p. A50 (1995).Google Scholar
[11] Rantamfiki, R., Tuomi, T., Zytkiewicz, Z.R., Dobosz, D., McNally, P.J., and Danilewsky, A.N., Mat. Res. Soc. Proc. 570 (1999) – at press.Google Scholar