Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-02-09T05:29:30.411Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetoreflection of Ion-Implanted Bismuth

Published online by Cambridge University Press:  25 February 2011

E. M. Kunoff ,
B. S. Elman  and
M. S. Dresselhaus
E. M. Kunoff
Affiliation:
Department Of Physics;
B. S. Elman
Affiliation:
Department Of Physics;
M. S. Dresselhaus
Affiliation:
Department Of Physics; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Ma 02139, USA
Get access

Abstract

Bi single crystals have been implanted with isoelectronic ions (As, Sb and Bi) and the electronic structur of these implanted materials has been studied using the magnetoreflection technique. Since the ion penetration depth and optical skin depths are of roughly the same magnitude, this technique provides a sensitive test for implantation-induced changes in the electronic structure. Explicitly, the magnetoreflection spectra show changes in lineshape, resonant frequency and in some cases the introduction of Landau level transitions forbidden in unimplanted bismuth. In particular, implantation-induced changes in the resonance lineshapes indicate an increase in plasma frequency as either the fluence of the implants or the ion size is increased. Further analysis of the data shows that the Lax model, which accounts for the magnetoreflection spectra of unimplanted bismuth, is equally applicable to bismuth implanted with isoelectronic ions. Our results yield measurable changes in the L-point band gap and smaller relative changes in the band parameter combination Eg/m* . The mechanism responsible for these changes in the electronic structure of bismuth is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 553
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mendez, E.E., Misu, A. and Dresselhaus, M.S., Phys. Rev. B24, 639 (1981).Google Scholar
2. Misu, A., Chieu, T.C., Dresselhaus, M.S. and Heremans, I., Phys. Rev. B25, 6155 (1982).Google Scholar
3. Abrikosov, A.A. and Falkovskii, L.A., Sov. Phys. JETP 16, 769 (1963).Google Scholar
4. Abrikosov, A.A., Sov. Phys. JETP 38, 1031 (1974).Google Scholar
5. McClure, J., J. Low Temp. Phys. 25, 527 (1976).Google Scholar
6. Baraff, G.A., Phys. Rev. 137, A842 (1965).Google Scholar
7. Wolff, P.A., J. Phys. Chem. Solids 25, 1057 (1964).Google Scholar
8. Cohen, M.H. and Blount, E.I., Phil. Mag. 5, 115 (1960).Google Scholar
9. Vecchi, M.P., Pereira, J.R. and Dresselhaus, M.S., Phys. Rev. B14, 298 (1976).Google Scholar
10. Vecchi, M.P., Ph.D. Thesis, MIT, unpublished (1975).Google Scholar
11. Cohen, M.H., Phys. Rev. 121, 387 (1961).Google Scholar
12. Crystal was graciously supplied by Prof. Kao, Yi-Han.Google Scholar
13. Lindhard, J., Scharff, M. and Schiott, H.E., Kgl. Danske Videnskab. Selskab, Mat. Fys. Medd. 33, 14 (1963).Google Scholar
14. Nicolini, C., Chieu, T.C., Dresselhaus, G. and Dresselhaus, M.S., Solid State Commun. 43, 233 (1982).Google Scholar
15. Schroeder, P.R., Ph.D. Thesis, MIT, unpublished (1969).Google Scholar
16. Wyckoff, LW.G., Crystal Structures, Vol. 1 (Interscience, NY, 1964).Google Scholar
17. Cohen, M.H., Falicov, L.M. and Golin, S., IBM J. Res. Dev. 8, 215 (1964).Google Scholar