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Magneto-Optical Studies of GaAs-AlGaAs Modulation Doped Quantum Wells Under Hydrostatic Pressure

Published online by Cambridge University Press:  28 February 2011

Weimin Zhou ,
Clive H. Perry  and
John M. Worlock
Weimin Zhou
Affiliation:
Northeastern University, Boston, MA 02115
Clive H. Perry
Affiliation:
Northeastern University, Boston, MA 02115
John M. Worlock
Affiliation:
Bell Communication Research, Red Bank, NJ 07701
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Abstract

High pressure photoluminescence measurements on modulation doped GaAs-AlGaAs quantum well structures have been performed for the first time with applied magnetic fields up to 15 Tesla. We have observed Landau fans from interband transitions of the 2D free electron gas between 0 and 8.5 kbar. In this pressure range the electron effective mass in GaAs increased at the rate of 2.6% per kbar. Above 9 kbar, the free Landau transitions disappeared and bound magneto-exiton behaviour dominated the spectrum. The influence of pressure on the band-gaps causes a controlled trapping of the free electron from the GaAs well to Si donors (DX centers) in the AlGaAs layers. Above 9 kbar the pressure coefficient of the GaAs band gap was found to be 10.4 meV/kbar which is comparable to the accepted value in undoped GaAs quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 697
Copyright
Copyright © Materials Research Society 1990

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