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Magnetically Controlled Photovoltaic Diode Structure

Published online by Cambridge University Press:  01 February 2011

V. K. Dugaev ,
Yu. Vygranenko ,
M. Vieira ,
V. I. Litvinov  and
J. Barnaś
V. K. Dugaev
Affiliation:
Department of Electronics and Communications, Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emidio Navarro, 1949-014 Lisbon, Portugal Institute for Materials Science Problems, Vilde 5, 58001 Chernovtsy, Ukraine
Yu. Vygranenko
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
M. Vieira
Affiliation:
Department of Electronics and Communications, Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emidio Navarro, 1949-014 Lisbon, Portugal
V. I. Litvinov
Affiliation:
WaveBand Corporation, Suite 1105, 375 Van Ness Ave., Torrance, CA 90501
J. Barnaś
Affiliation:
Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, and Institute of Molecular Physics, Polish Academy of Sciences, ul. M. Smoluchowskiego 17, 60-179 Poznań, Poland
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Abstract

We propose a new integrated device for spintronics application, which is based on a hybrid metal-semiconductor structure. The device consists of a Si-based p-i-n photodetector sandwiched between two layers of a ferromagnetic metal (3d ferromagnet or half-metallic compound). The photocurrent flowing in such a system is shown to depend on its magnetic configuration. This, in turn, allows controlling the device performance by an externally applied magnetic field. We have estimated magnitude of the effect and also determined the role of relevant material parameters.

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