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Low-Temperature Preparation of Poly-Si Thin-Films Having Giant Grains

Published online by Cambridge University Press:  15 February 2011

Wen-Chang Yeh  and
Masakiyo Matsumura
Wen-Chang Yeh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan, wyeh@silicon.pe.titech.ac.jp, URL: http://silicon.pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan
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Abstract

A low heat-capacitance substrate has been introduced to lateral grain-growth for Si thin-films. Grains as large as 13μm could be fabricated by irradiation of a single shot of an excimer-laser light pulse with intensity gradient. The film has an orientation in the (110) direction, different from (111) for the conventional excimer-laser-annealed film, and is applicable to a seed layer for solid-phase epitaxial-growth aiming at solar cell application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 177
Copyright
Copyright © Materials Research Society 1999

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References

1. Kumari, S., Arora, N. K. and Jain, G. C.: Solar En. Mat., 5 (1981) 383.Google Scholar
2. Koliwad, K. M. and Daud, T.: 14th IEEE Photovoltaic Specialists Conf., (1980) 1204.Google Scholar
3. Ghosh, A. K., Fishman, C. and Feng, T.: J. Appl. Phys., 51 (1980) 446.Google Scholar
4. Card, H. C. and Yang, E. S.: IEEE Trans. Electron Devices, 24 (1977) 397.Google Scholar
5. Yeh, W.-C. and Matsumura, M.: Jpn. J. Appl. Phys., 38 (1999) L110.Google Scholar
6. Ishikawa, K., Ozawa, M., Oh, C. and Matsumura, M.: Jpn. J. Appl. Phys., 37 (1998) 731.Google Scholar
7. Oh, C. and Matsumura, M.: Jpn. J. Appl. Phys., 37 (1998)5474.Google Scholar
8. Narayan, J. and White, C. W.: Appl. Phys. Lett., 44 (1984) 35.Google Scholar
9. Russell, H. W.: American Ceramic Soc., (1934) 1.Google Scholar
10. Jin, C., Luttmer, J.D., Smith, D.M. and Ramos, T.A.: MRS Bulletin, 22 (1997) 39.Google Scholar
11. Yamamoto, K., Nakashima, A., Suzuki, T. and Yoshimi, M.: Jpn. J. Appl. Phys., 3 (1994) L1751.Google Scholar
12. Kuriyama, H., Nohda, T., Aya, Y., Kuwahara, T., Wakisaka, K., Kiyama, S. and Tsuda, S.: Jpn. J. Appl. Phys., 33 (1994) 5657.Google Scholar
13. Drosd, R. and Washibum, J.: J. Appl. Phys., 53 (1982) 397.Google Scholar