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Low-Temperature Deposition and Characterization of AlxIn1-xN Thin Films

Published online by Cambridge University Press:  10 February 2011

Guohua Qiu ,
J. O. Olowolafe ,
Tao Peng ,
K. M. Unruh ,
C. P. Swann  and
J. Piprek
Guohua Qiu
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE19716
J. O. Olowolafe
Affiliation:
Department of Electrical Engineering, University of Delaware, Newark, DE19716
Tao Peng
Affiliation:
Material Science Program, University of Delaware, Newark, DE19716
K. M. Unruh
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE19716
C. P. Swann
Affiliation:
Department of Physics and Astronomy, University of Delaware, Newark, DE19716
J. Piprek
Affiliation:
Material Science Program, University of Delaware, Newark, DE19716
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Abstract

Thin III-V nitride semiconductors fidms are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800–1000°C) for the films to grow epitaxially. In the present work, we deposited AlxIn1-xN films on Si substrates by reactive magnetron sputttering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The AlxIn1-xN films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of our AlxIn1-xN alloys varies from 1.9 ev to 4.2 ev The bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 301
Copyright
Copyright © Materials Research Society 1997

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References

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