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Low Temperature Preparation of BaTiO3 Films on Silicon

Published online by Cambridge University Press:  21 February 2011

M.E. Pilleux  and
V.M. Fuenzalida
M.E. Pilleux
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas, Departamento de Física, Casilla 487-3, Santiago, Chile
V.M. Fuenzalida*
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas, Departamento de Física, Casilla 487-3, Santiago, Chile
*
†To whom correspondence should be addressed
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Abstract

Insulating BaTiO3 thin films were obtained on titanium coated silicon wafers using a novel low temperature technique. They were produced hydrothermally by introducing the substrate in a 0.25M Ba(OH)2 solution inside an autoclave and heating in the 200- 250°C range for 8 hours. This treatment delivered smooth pinhole-free films on the Ti with thicknesses ranging from 35nm (200°C) to 45nm (250°C), with grains in the 100- 300nm diameter range in all films. The films exhibited a dielectric constant up to 227, a breakdown field of 70MV/m, and a dc resistivity of 4.106Ωm.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 333
Copyright
Copyright © Materials Research Society 1993

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References

1. Buskirk, P.C. Van, Gardiner, R., and Kirlin, P.S., J. Vac. Sci. Technol. A, 10 [4] 1578 (1992).Google Scholar
2. Roy, D. and Krupanidhi, S.B., Appl. Phys. Lett., 61 [17] 2057 (1992).Google Scholar
3. Yoshimura, M., Yoo, S.E., Hayashi, M. and Ishizawa, N., Jpn. J. Appl. Phys., 28 [11] L2007 (1989); J. Ceram. Soc. Jpn., 98 [8] 930 (1990).Google Scholar
4. Pilleux, M.E., Grahmann, C.R., Fuenzalida, V.M., and Avila, R., Appl. Surf. Sci., 65/66, 283 (1993).Google Scholar
5. Pilleux, M.E. and Fuenzalida, V.M., unpublished results.Google Scholar
6. Bacsa, R., Ravindranathan, P., and Dougherty, J.P., J. Mater. Res., 7 [2] 423 (1992).Google Scholar
7. Ishizawa, N., Banno, H., Hayashi, M., Yoo, S.E., and Yoshimura, M., Jpn. J. Appl. Phys., 29 [11] 2467 (1990).Google Scholar
8. Pilleux, M.E. and Fuenzalida, V.M., J. Appl. Phys., 74 [7] (1993), to be published 9. A.K. Goswami, J. Appl. Phys., 40 [2] 619 (1969).Google Scholar