Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-02-10T08:04:47.830Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Poly-Si on Flexible Polymer Substrates for Active Matrix Displays and Other Applications

Published online by Cambridge University Press:  15 February 2011

Nigel D. Young ,
Michael J. Trainor ,
Soo-Young Yoon ,
David J. McCulloch ,
Richard W. Wilks ,
Andrew Pearson ,
Sandra Godfrey ,
Peter W. Green ,
Sander Roosendaal  and
Elizabeth Hallworth
Nigel D. Young
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Michael J. Trainor
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Soo-Young Yoon
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
David J. McCulloch
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Richard W. Wilks
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Andrew Pearson
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Sandra Godfrey
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Peter W. Green
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Sander Roosendaal
Affiliation:
Philips Research Laboratories, Eindhoven, 5656AA, The Netherlands.
Elizabeth Hallworth
Affiliation:
Philips Research Laboratories, Redhill, RH1 5HA, U.K.
Get access

Abstract

A variety of polymer materials including polyimide (PI), polyarylate (PAR), polynorbonene (PNB) and polyethersulphone (PES) have been studied for use as substrates in the formation of active matrix displays based upon polycrystalline silicon (poly-Si) thin film transistors (TFTs). A process used to fabricate transflective mobile phone displays at 250°C on such substrates is described in detail. The NMOS TFTs show a mobility of 100cm2/Vs, and a threshold voltage of 3.9V; the PMOS devices have a mobility of 52cm2/Vs, and a threshold voltage of -6V. Issues relating to performance of these devices, yield of the arrays, and manufacturability are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H2.1
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chen, Y, Denis, K, Kazlas, P and Drzaic, P, SID'01 Digest, 157, (2001).Google Scholar
2. Nisato, G and Leterrier, Y, to be presented at the Spring MRS (2003).Google Scholar
3. Slikkerveer, P, Nisato, G, Kooyman, G, Cirkel, P and Bouten, P, SID'02 Digest, 27, (2002).Google Scholar
4. Utsunomiya, S, Saeki, T, Inoue, S and Shimoda, T, AMLCD'02, 37, (2002).Google Scholar
5. Asano, A and Kinoshita, T, SID'02 Digest, 1196, (2002).Google Scholar
6. Young, N, Bunn, R, Wilks, R, McCulloch, D, Harkin, G, Deane, S, Edwards, M, and Pearson, A, Eurodisplay'96, 555, (1996).Google Scholar
7. Young, N, McCulloch, D, and, I French Gale, I, AsiaDisplayWorkshop'98, 83, (1998).Google Scholar
8. Young, N, French, I, Trainor, M, Murley, D, McCulloch, D and Wilks, R, IDW'99, 219, (1999).Google Scholar
9. Young, N, Bunn, R, Wilks, R, McCulloch, D, Deane, S, Edwards, M, Harkin, G and Pearson, A, J. SID, 5/3, 275, (1997).Google Scholar
10. Angiolini, S, Avidano, M, Bracco, R, Barlocco, C, Young, N, Trainor, M and Zhao, X-M, to be published SID'03 Digest, (2003).Google Scholar
11. Nisato, G, Bouten, P, Slikkerveer, P, , WBennett, Graff, G, Rutherford, N and Weise, L, Proc. AsiaDisplay/IDW'01, 1435, (2001).Google Scholar
12. Burrows, P, Graff, G, Gross, M, Martin, P, Shi, M, Hall, M, Mast, E, Bonham, C, Bennet, W and Sullivan, M, Displays, 22, 65, (2001).Google Scholar
13. Brotherton, S, McCulloch, D, Gowers, J, French, I and Gale, I, Proc IDMC'00, 65, (2000).Google Scholar
14. Gosain, D, Noguchi, T, Machida, A and Usui, S, Proc. AMLCD'99, 239, (1999).Google Scholar
15. Young, N, Harkin, G, Bunn, R, McCulloch, D and French, I, Trans Electron Devices, 43, 11, 1930, (1996).Google Scholar