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Low Temperature GaAs Growth on GaAs and Si with Metal-Organic Molecular Beam Epitaxy Assisted by Hydrogen Plasma

Published online by Cambridge University Press:  26 February 2011

Ikuo Suemune ,
Yasuhiro Kunitsugu ,
Yoshimitsu Tanaka ,
YAsuo Kan  and
Masamichi Yamanishi
Ikuo Suemune
Affiliation:
Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima, 724 Japan
Yasuhiro Kunitsugu
Affiliation:
Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima, 724 Japan
Yoshimitsu Tanaka
Affiliation:
Research and Development Laboratories, Matsushita Electric Works Ltd., Kadoma, Osaka, 571 Japan
YAsuo Kan
Affiliation:
Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima, 724 Japan
Masamichi Yamanishi
Affiliation:
Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima, 724 Japan
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Abstract

New low-temperature cleaning and growth processes are presented using hydrogen plasma. Cleaning of GaAs and Si surfaces are possible above 200°C and 300°C, respectively. Single-domain GaAs thin films are successfully grown on Si at 400°C using metal-organic compounds for both Ga and As. Selective growth of GaAs is demonstrated at 400°C on a Si surface partially covered withSiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 329
Copyright
Copyright © Materials Research Society 1989

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References

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