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Low Temperature Diamond Growth With CF4 Addition in A Hot Filament Reactor

Published online by Cambridge University Press:  22 February 2011

Evaldo. J. Corat ,
V. J. Trava-Airoldi ,
Nélia F. Leite ,
Angel F.V. Peña  and
Vítor Baranauskas
Evaldo. J. Corat
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
V. J. Trava-Airoldi
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
Nélia F. Leite
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
Angel F.V. Peña
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE/LAS, C. P. 515, 12.201-970, São José dos Campos, S.P., Brazil
Vítor Baranauskas
Affiliation:
Faculdade de Engenharia Elétrica, Universidade Estadual de Campinas, Campinas, S.P., Brazil
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Abstract

In this work we show that the addition of a small amount of CF4 to a regular CH4 -H2 gas mixture allows diamond growth at lower temperatures with reasonable growth rates. We used a hot filament assisted reactor and observed diamond growth with a substrate temperature as low as 390 ଌ. We present a comparative study for the growth dependence on substrate temperature with and without CF4 addition in the gas mixture. The growth rate is measured by post growth weighting with a micro balance. Raman spectroscopy, SEM and AFM images show the good quality of the films grown at low temperatures when CF4 is added to the feeding gas.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 421
Copyright
Copyright © Materials Research Society 1994

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References

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