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Long-Range Diffusion of Transition Metals in Silicon During Rapid Thermal Annealing

Published online by Cambridge University Press:  25 February 2011

D.R. Sparks ,
N.S. Alvi  and
K. Sanders
D.R. Sparks
Affiliation:
Delco Electronics Corp., Kokomo, IN 46902, and M.A. Dayananda, Materials EngineeringPurdue University, West Lafayette, IN 47907
N.S. Alvi
Affiliation:
Delco Electronics Corp., Kokomo, IN 46902, and M.A. Dayananda, Materials EngineeringPurdue University, West Lafayette, IN 47907
K. Sanders
Affiliation:
Delco Electronics Corp., Kokomo, IN 46902, and M.A. Dayananda, Materials EngineeringPurdue University, West Lafayette, IN 47907
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Abstract

A detailed comparison between transition metal diffusion results in silicon during rapid thermal annealing obtained in this and other studies with the diffusivity and solubility results obtained in the literature has been made. Using secondary ion mass spectroscopy, U-shaped diffusion profiles, possibly denoting amphoteric diffusion, have been noted fo Cu, Ni, and Pd in silicon during short anneals. Applications are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 385
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Borisenko, V.E., Dorofeev, A.M. and Labunov, V.A., Pis'ma v Zhif. (Soviet Union), 8, p.1420, (1982).Google Scholar
2. Zagozdzon-Wosik, W., J. Electrochem. Soc., 135, p.2065, (1988).Google Scholar
3. Borisenko, V.E. and Dorofeev, A.M., in “Laser-Solid Interactions and Transient Thermal Processing of Materials,” eds., Narayan, J., Brown, W.L. and Lemons, R.A., MRS, Pittsburgh, PA, p.5, (1983).Google Scholar
4. Bondarenko, V.P., Borisenko, V.E. and Doorfeev, A.M., J. Tech. Phys., (Soviet Union), 54, p.2021, (1984).Google Scholar
5. Bean, K.E., Lindberg, K. and Rozgonyi, G., in “Advanced Materials for ULSI” eds. Scott, M., Akasaka, Y. and Reif, R., The Electochem. Soc., Pennington, NJ, p.3, (1988).Google Scholar
6. Sparks, D.R., Chapman, R.G., and Alvi, N.S., Appl. Phys. Lett., 49, p.525 (1986).Google Scholar
7. Sparks, D.R. and Chapman, R.G., J. Electrochem. Soc., 133, p.1201, (1986).Google Scholar
8. Sparks, D.R., Ph.D. Thesis, Purdue University, (1989).Google Scholar
9. Sparks, D.R., Alvi, N.S. and Dayananda, M.A., Defect and Diffusion Forum, 59, p.239, (1988).CrossRefGoogle Scholar
10. Sparks, D.R., J. Electrochem. Soc., 134, p.458, (1987).Google Scholar
11. Graff, K., in “Semiconductor Silicon 1986,” eds. Huff, H.R., Kolbesen, B. and Abe, T., The Electrochem. Soc., Pennington, NJ, p.751, (1986).Google Scholar
12. Stacy, W.T., Allison, D.F. and Wu, T.C., in “Semiconductor Silicon 1981,” eds. Huff, H.R., Kriegler, R.J. and Takeishi, Y., The Electrochem. Soc., Pennington, NJ, p.344, (1981).Google Scholar
13. Graft, K., Hefner, H.A. and Pieper, H., in “Impurity Diffusion and Gettering in Silicon,” eds. Fair, R.B., Pearce, C.W. and Washburn, J., MRS, Pittsburgh, PA, p.19, (1985).Google Scholar
14. Sprokel, G.J. and Fairfield, J.M., J. Electrochem. Soc., 112, p.200, (1965).Google Scholar
15. Stolwijk, N.A., Perret, M. and Mehrer, H., Defect and Diffusion Forum, 59 p.79, (1988).Google Scholar
16. Frank, F.C. and Turnbull, D., Phys. Rev., 104, p.617, (1956).Google Scholar
17. Gosele, U., Frank, W. and Seeger, A., Appl. Phys., 23, p361, (1980).CrossRefGoogle Scholar
18. Sparks, D.R., Alvi, N.S. and Dayananda, M.A., in “Extended Abstracts 88-2 The Electrochem. Soc., p.111, (1988).Google Scholar
19. Busta, H.H. and Waggner, H.A., J. Electrochem. Soc., 124, p.1424, (1977)Google Scholar
20. Sparks, D.R. and Chapman, R.G., Microcontamination, 4, p67, (1986).Google Scholar