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The Local Structure and I-V Characteristics of Chromium Doped Semiconducting Boron Carbide

Published online by Cambridge University Press:  14 March 2011

Jing Liu ,
P. A. Dowben ,
Guangfu Luo ,
Wai-Ning Mei ,
Anil Kumar Rajapitamahuni ,
Andre Sokolov ,
Sudarshan Karki  and
Anthony N. Caruso
Jing Liu
Affiliation:
Department of Physics and Astronomy, University of Nebraska-Lincoln, 855 N. 16th St., Lincoln, NE 68588-0299, U.S.A.
P. A. Dowben
Affiliation:
Department of Physics and Astronomy, University of Nebraska-Lincoln, 855 N. 16th St., Lincoln, NE 68588-0299, U.S.A.
Guangfu Luo
Affiliation:
Department of Physics, University of Nebraska-Omaha, Omaha, NE 68182-0266, U.S.A. State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People’s Republic of China.
Wai-Ning Mei
Affiliation:
Department of Physics, University of Nebraska-Omaha, Omaha, NE 68182-0266, U.S.A.
Anil Kumar Rajapitamahuni
Affiliation:
Department of Physics and Astronomy, University of Nebraska-Lincoln, 855 N. 16th St., Lincoln, NE 68588-0299, U.S.A.
Andre Sokolov
Affiliation:
Department of Physics and Astronomy, University of Nebraska-Lincoln, 855 N. 16th St., Lincoln, NE 68588-0299, U.S.A.
Sudarshan Karki
Affiliation:
Department of Physics, University of Missouri-Kansas City, Kansas City, MO 64110, U.S.A.
Anthony N. Caruso
Affiliation:
Department of Physics, University of Missouri-Kansas City, Kansas City, MO 64110, U.S.A.
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Abstract

The local spin configuration and band structure of chromium doped boron carbide calculated by density functional theory suggests local magnetic ordering. While the long range dopant position appears random in the boron carbide semiconductor, the local position and initial empirical/computational results suggest the promise of large magneto-resistive effects. The chromium doped boron carbide thin films, fabricated by boron carbide-chromium co-deposition, were studied by current-voltage (I-V) characteristics measurements. The results provide some reason to believe that magneto-resistive effects are indeed present at room temperature.

Keywords

Crmagnetic propertiessemiconducting

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc05-01
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Takizawa, H., Haze, N., Okamoto, K., Uheda, K. and Endo, T., Mater. Res. Bull. 37, 113 (2002).Google Scholar
2. Kuhlmann, U., Werheit, H., Pelloth, J., Keune, W. and Lundstrom, T., Phys. Status Solidi b 187, 43 (1995).Google Scholar
3. Kuhlmann, U., Werheit, H., Dose, T. and Lundstrom, T., J. Alloys Compounds 186, 187 (1992).Google Scholar
4. Werheit, H., Schmechel, R., Kueffel, V. and Lundstrom, T., J. Alloys Compounds 262 372 (1997).Google Scholar
5. Matsuda, H., Nakayama, T., Kimura, K., Murakami, Y., Suematsu, H., Koboyashi, M. and Higashi, I., Phys. Rev. B 52, 6102 (1995).Google Scholar
6. Hwang, S.-D., Yang, K., Dowben, P. A., Ahmad, A. A., Ianno, N. J., Li, J. Z., Lin, J. Y., Jiang, H. X. and McIlroy, D. N., Appl. Phys. Lett. 70, 1028 (1997).Google Scholar
7. Hwang, S.-D., Remmes, N., Dowben, P. A. and McIlroy, D. N., J. Vac. Sci. Technol. A 15, 854 (1997).Google Scholar
8. McIlroy, D. N., Hwang, S.-D., Yang, K., Remmes, N., Dowben, P. A., Ahmad, A. A., Ianno, N. J., Li, J. Z., Lin, J. Y. and Jiang, H. X., Appl. Phys. A 67, 335 (1998).Google Scholar
9. Hwang, S.-D., Remmes, N. B., Dowben, P. A. and McIlroy, D. N., J. Vac. Sci. Technol. B 14, 2957 (1996).Google Scholar
10. Dowben, P. A., Kizilkaya, O., Liu, J., Montag, B., Nelson, K., Sabirianov, I. and Brand, J. I., Mater. Lett. 63, 72 (2009).Google Scholar
11. Liu, J., Luo, G., Mei, W.-N., Kizilkaya, O., Shepherd, E.D., Brand, J.I. and Dowben, P.A., J. Phys. D: Applied Physics 43, 085403 (2010).Google Scholar
12. Carlson, L., La Graffe, D., Balaz, S., Ignatov, A., Losovyj, Y. B., Choi, J., Dowben, P. A. and Brand, J. I., Appl. Phys. A 89, 195 (2007).Google Scholar
13. Luo, Guangfu, Lu, Jing, Liu, Jing, Mei, Wai-Ning, and Dowben, P. A., Materials Science and Engineering B 175, 1 (2010).Google Scholar
14. Colón Santana, J. A., Skomski, R., Singh, V., Palshin, V., Petukhov, A., Losovyj, Ya. B., Sokolov, A., Dowben, P. A., and Ketsman, I., J. Applied Physics 105, 07A930 (2009)Google Scholar
15. Delley, B 1990 J. Chem. Phys. 92 508; Delley B 2000 J. Chem. Phys. 113 7756 Google Scholar
16. Ignatov, A. Yu., Losovyj, Y. B., Carlson, L., La Graffe, D., Brand, J. I. and Dowben, P. A., J. Appl. Phys. 102, 083520 (2007).Google Scholar
17. Lee, S., Mazurowski, J., Ramseyer, G., and Dowben, P.A., Journ. Appl. Phys. 72, 4925 (1992).Google Scholar
18. Kleemann, W., Borisov, P., Shvartsman, V.V., Bedanta, S., Tkach, A., Vilarinho, P.M., J. Magn. Magn. Mat. 321, 1785 (2009)Google Scholar
19. Kleemann, W., Bedanta, S., Borisov, P., Shvartsman, V.V., Miga, S., Dec, J., Tkach, A., Vilarinho, P.M., Eur. Phys. J. B 71, 407 (2009)Google Scholar
20. Shvartsman, V.V., Bedanta, S., Borisov, P., Kleemann, W., Tkach, A., Vilarinho, P.M., Phys. Rev. Lett. 101, 165704 (2008).Google Scholar
21. Kleemann, W., Shvartsman, V.V., Bedanta, S., Borisov, P., Tkach, A., Vilarinho, P.M., J. Phys. Cond. Matter 20, 434216 (2008)Google Scholar