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Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy

Published online by Cambridge University Press:  10 February 2011

M. K. H. Natusch ,
G. A. Botton ,
R. F. Broom ,
P. D. Brown ,
D. M. Tricker  and
C. J. Humphreys
M. K. H. Natusch
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
G. A. Botton
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
R. F. Broom
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
P. D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
D. M. Tricker
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
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Abstract

The optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 763
Copyright
Copyright © Materials Research Society 1998

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