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Linkage of Efficiency and Stability of a-Si Solar cells

Published online by Cambridge University Press:  25 February 2011

David Redfield  and
Richard H. Bube
David Redfield
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305–2205
Richard H. Bube
Affiliation:
Dept. of Materials Science & Engineering, Stanford University, Stanford, CA 94305–2205
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Abstract

By combining the steady-state and transient behaviors of a recently generalized analysis of the kinetics of metastable defects in good amorphous Si:H, it is shown that no treatment can remove all metastable defects. There is always a significant remnant that is proposed to be the observed built-in defects, which are then not a separate species, distinct from the metastable defects. This remnant is due to vibrational breaking of weak bonds in latent defect centers, and cannot be due to recombination of thermally excited carriers. If the stability can be improved by reducing the number of these latent defect centers, this will also reduce the density of built-in defects that control the initial efficiency. Furthermore, there are good reasons to believe that the source of these defects is extrinsic to a-Si:H, so that improvement in both properties may be achievable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 459
Copyright
Copyright © Materials Research Society 1989

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References

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