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Light-Induced Metastable Effects in a-Ge:H

Published online by Cambridge University Press:  25 February 2011

P. V. Santos ,
C. F. de O. Graeff ,
G. Marcano  and
I. Chambouleyron
P. V. Santos
Affiliation:
Instituto de Fisica - Universidade Estadual de Campinas (UNICAMP) P.O. Box 6165, 13081 Campinas, S.P., BRAZIL
C. F. de O. Graeff
Affiliation:
Instituto de Fisica - Universidade Estadual de Campinas (UNICAMP) P.O. Box 6165, 13081 Campinas, S.P., BRAZIL
G. Marcano
Affiliation:
Instituto de Fisica - Universidade Estadual de Campinas (UNICAMP) P.O. Box 6165, 13081 Campinas, S.P., BRAZIL
I. Chambouleyron
Affiliation:
Instituto de Fisica - Universidade Estadual de Campinas (UNICAMP) P.O. Box 6165, 13081 Campinas, S.P., BRAZIL
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Abstract

We report on light induced metastable conductivity changes in a-Ge:H thin films deposited by rf-sputtering. The dark- and the photoconductivity of the samples decrease after light soaking. The changes are metastable and both the defect formation and the defect annealing processes are temperature activated. As in the case of a-Si:H films, the time evolution of the conductivity changes is well represented by a stretched exponential type of decay, with activated time constants.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 769
Copyright
Copyright © Materials Research Society 1990

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References

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