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Light-Induced Degradation Effects in a-Si:H Observed by Raman Scattering Measurements

Published online by Cambridge University Press:  10 February 2011

P. Stradins ,
M. Kondo ,
N. Hata  and
A. Matsuda
P. Stradins
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan, stradins@etl.go.jp
M. Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
N. Hata
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

We have attempted to observe changes in the Raman scattering spectrum of a-Si:H due to light exposure. We do not find any detectable shift of the position or change in the width of the TO phonon peak. We find, however, other unexpected degradation phenomena in the Raman spectrum of a-Si:H samples which are attributed to light induced changes in the high energy tail of room temperature luminescence. Raman scattering has a relatively large (10-20% of TO peak height) broad background which extends to 2000cm−1 in the Stokes region and tails into the anti-Stokes region. Multiple phonon processes, geminate radiative recombination and surface oxide contributions are considered. Degradation phenomena and the broad background signal are observed in a-Si:H deposited on different substrates as well as in free-standing films. Degradation processes in bare fused quartz substrates are also investigated. Small structural changes surrounding the light-induced defects are proposed and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 723
Copyright
Copyright © Materials Research Society 1998

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References

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