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Light Scattering Measurements of Surface Roughness in Molecular Beam Epitaxy Growth of GaAs

Published online by Cambridge University Press:  22 February 2011

C. Lavoie ,
M. K. Nissen ,
S. Eisebitt ,
S. R. Johnson ,
J. A. Mackenzie  and
T. Tiedje
C. Lavoie
Affiliation:
Department of Physics, University of British Columbia, Vancouver, BC, V6T IZI
M. K. Nissen
Affiliation:
Department of Physics, University of British Columbia, Vancouver, BC, V6T IZI
S. Eisebitt
Affiliation:
Department of Physics, University of British Columbia, Vancouver, BC, V6T IZI
S. R. Johnson
Affiliation:
Department of Physics, University of British Columbia, Vancouver, BC, V6T IZI
J. A. Mackenzie
Affiliation:
Department of Physics, University of British Columbia, Vancouver, BC, V6T IZI
T. Tiedje
Affiliation:
Also Department of Electrical Engineering, University of British Columbia, Vancouver, BC, V6T IZI
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Abstract

In-situ measurements of diffuse light scattering at λ = 457 nm are reported from the surface of GaAs films during growth by molecular beam epitaxy. Three different scattering angles are measured simultaneously corresponding to spatial frequencies in the surface roughness of q = 0.9, 12, and 17 μm−1. During growth the initial surface roughness caused by the oxide desorption decreases at high spatial frequencies and increases at low spatial frequency. The low spatial frequency roughness corresponding to scattering vectors parallel to [110] increases more rapidly during growth than for scattering parallel to [111].

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