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Kinetics of Epitaxial Layer Growth from Silane on (100) Silicon

Published online by Cambridge University Press:  15 February 2011

D. W. Greve
D. W. Greve*
Affiliation:
Department of Electrical and Computer EngineeringCarnegie Mellon University, Pittsburgh, PA 15213 USA
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Abstract

Low temperature growth of silicon from silane is required in devices such as germanium- silicon HBTs and multiple quantum well structures for infrared detectors. Understanding the silicon growth kinetics is an important step in developing a complete model for incorporation of other species such as germanium, boron, and phosphorus. In this paper, we show that a wide range of recent data can be well explained by a model which includes the effect of hydrogen carrier gas and is based on a simple two- step reaction sequence for silane decomposition. Gas phase reactions and gas phase transport limits appear unimportant at least up to 1 Torr total pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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