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Kinetics of Copper Grain Growth During Nitridation of Cu-Cr and Cu-Ti Thin Films by In Situ Tem

Published online by Cambridge University Press:  25 February 2011

Z. Atzmon ,
R. Sharma ,
S. W. Russell  and
J.W. Mayer
Z. Atzmon
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
R. Sharma
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
S. W. Russell
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
J.W. Mayer
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
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Abstract

Co-deposited Cu-Cr and Cu-Ti thin films were heated at various temperatures in an ammonia ambient in an environmental cell placed into the column of a transmission electron microscope (TEM). The reaction dynamics were observed in situ and recorded on a videotape using a TV camera with 1/30 second time resolution. Nitridation of chromium and titanium was accompanied by the nucleation and growth of copper particles starting at 370 and 580°C, respectively. It was found that in the Cu-Ti system at a temperatures regime of 370-400°C the growth rate behaves under a parabolic law; namely, the process is controlled by diffusion of Cu through the nitride matrix. However, for the Cu-Cr system at temperatures of 610-630°C two growth regimes were observed. In the initial growth stages, the surface reaction is rate-limiting, while for longer nitridation times, growth is diffusion-controlled.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 625
Copyright
Copyright © Materials Research Society 1995

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References

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