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Is B(CH3)3 An Interesting Alternative to B2H6 for a-Si:H p Doping?

Published online by Cambridge University Press:  25 February 2011

Wu Zongyan ,
A. Lloret ,
J.-M. Siefert ,
P. Roca i Cabarrocas  and
B. Equer
Wu Zongyan
Affiliation:
Laboratoire Physique des Interfaces et des Couches Minces, Ecole Polytechnique, F91128 Palaiseau Cedex, France and
A. Lloret
Affiliation:
Laboratoire Physique des Interfaces et des Couches Minces, Ecole Polytechnique, F91128 Palaiseau Cedex, France and
J.-M. Siefert
Affiliation:
Solems S.A., r. Léon Blum, F91124 Palaiseau Cedex, France
P. Roca i Cabarrocas
Affiliation:
Laboratoire Physique des Interfaces et des Couches Minces, Ecole Polytechnique, F91128 Palaiseau Cedex, France and
B. Equer
Affiliation:
Laboratoire Physique des Interfaces et des Couches Minces, Ecole Polytechnique, F91128 Palaiseau Cedex, France and
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Abstract

The contamination effects induced by B2H6 and B(CH3)3 in a-Si:H layers are compared, using in-situ Kelvin probe experiments as well as SIMS measurements. It is found that B(CH3)3 induces at least 50 times less contamination, even at 250°C. It is also found that materials containing CH3 radicals have a lower electron affinity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 291
Copyright
Copyright © Materials Research Society 1989

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References

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