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Interface Stability in Hybrid Transition Metal-Oxide Magnetic Junctions

Published online by Cambridge University Press:  10 February 2011

J. Z. Sun ,
K. P. Roche  and
S. S. P. Parkin
J. Z. Sun
Affiliation:
Ibm T. J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598, jonsun@us.ibm.com
K. P. Roche
Affiliation:
Ibm Almaden Research Center, 650 Harry Road, San Jose, CA 95120
S. S. P. Parkin
Affiliation:
Ibm Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Abstract

Recent experiments revealed an apparently bias-dependent tunneling magnetoresistance between a transition metal (such as Fe, Co) and an oxide barrier such as SrTiO3. We examine the materials issues involved in this type of hybrid transition metal-oxide junctions. The junction interface is shown to be unstable against thermal treatment or high-bias current stress. We conclude that the junction magnetoresistance is largely determined by the formation of an interface oxide layer different from the barrier or the transition metal electrode themselves.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 51
Copyright
Copyright © Materials Research Society 2000

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