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Interaction of Solute in Atoms with Dislocations in Lec GaAs

Published online by Cambridge University Press:  03 September 2012

N. Burle-Durbec ,
A. Rakotobe ,
B. Pichaud  and
F. Minari
N. Burle-Durbec
Affiliation:
U. A. CNRS 797 University Aix-Marseille III, Fac. Sciences St. Jerome, case 151 – 13397 Marseille Cedex 13 France
A. Rakotobe
Affiliation:
U. A. CNRS 797 University Aix-Marseille III, Fac. Sciences St. Jerome, case 151 – 13397 Marseille Cedex 13 France
B. Pichaud
Affiliation:
U. A. CNRS 797 University Aix-Marseille III, Fac. Sciences St. Jerome, case 151 – 13397 Marseille Cedex 13 France
F. Minari
Affiliation:
U. A. CNRS 797 University Aix-Marseille III, Fac. Sciences St. Jerome, case 151 – 13397 Marseille Cedex 13 France
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Abstract

We summarize here experimental results about moving dislocations and dislocations sources, in In-doped GaAs; several selective behaviours between α (As core in the glide set) and β dislocations are noticed. We try to correlate these observations with material structure and composition, and we propose a model of atomic interaction between In and α partial dislocations which could explain most of experimental observations. Some ideas about In diffusion are also developed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 591
Copyright
Copyright © Materials Research Society 1992

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References

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