Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-04T15:50:45.181Z Has data issue: false hasContentIssue false
  • English
  • Français

Interaction of Deuterium with the Simox Oxide

Published online by Cambridge University Press:  10 February 2011

L. Zimmerman ,
A. Riveral ,
J. M. M. De Nijs  and
A. Van Veen
L. Zimmerman
Affiliation:
'DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
A. Riveral
Affiliation:
'DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
J. M. M. De Nijs
Affiliation:
'DIMES, Delft University of Technology, P.O. Box 5053, 2600GB Delft, The Netherlands
A. Van Veen
Affiliation:
2IRI, Delft University of Technology, P.O. Box 5042, 2600AG Delft Netherlands
Get access

Abstract

The interaction of deuterium with silicon-implanted-with-oxygen (SIMOX) was studied for samples with and without silicon top layer using thermal desorption measurements. Deuterium is incorporated in the buried oxide by disruption of the Si-O bridging bonds. The data reveal that the top layer reduces the uptake at 1073K. Furthermore, it retards release; a moderate (≈125K) and a high-temperature (≈1400K) retention were observed. It is proposed that release is accompanied by the reconstruction of the Si-O bonds and that the bare oxide surface constitutes an abundant source for defects thus enhancing the generation and elimination of Si-O bridging bond defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 331
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Dekker, , Einden, W.T.A. van den and Maas, H.G.R., Technical Digest IEDM 1993, p. 75 (1993).Google Scholar
2. Vanheusden, K. and Stesmans, A., Appl. Phys. Lett. 64, 2575 (1994).Google Scholar
3. Zvanut, M.E., Stahlbush, R.E., Carlos, W.E. and Hughes, H.L., IEEE Trans. Nucl. Sci. NS- 38, p. 1253 (1991).Google Scholar
4. Myers, S.M., Brown, G.A., Revesz, A.G. and Hughes, H.L., J. Appl. Phys 73, p. 2196 (1993).Google Scholar
5. Stahlbush, R.E., Carlos, W.E. and Prokes, S.M., IEEE Trans. Nucl. Sci. NS–34, p.1680 (1987).Google Scholar
6. van Veen, A., Mat. Sci. Forum 15–18, p. 3 (1987).Google Scholar
7. Borghesi, A., Sassella, A., Pivac, B. and Zanotti, L., Sol. State. Comm. 100, p. 657 (1996).Google Scholar
8. Myers, S., Follstaedt, D.M., Stein, H. J. and Wampler, W.R., Phys. Rev. B 47, p. 13380 (1993).Google Scholar