Published online by Cambridge University Press: 15 February 2011
Silicon-based optoelectronic devices enable the realization of optoelectronic systems that are compatible with integrated circuit manufacturing technology. This work reports on silicon-based visible light-emitting devices (LEDs) that have been successfully integrated into a standard bipolar fabrication sequence. The basic LED structure consists of a 0.5–1.0μm thick silicon-rich silicon oxide (SRSO) active light-emitting layer formed on a p-type silicon wafer by partial oxidation of porous silicon (PSi), with an n+ doped polysilicon cathode. The LEDs exhibit bright electroluminescence (EL) with a spectral peak between 1.75 and 1.90e. The LEDs are connected in a common-emitter configuration to integrated vertical pnp bipolar driver transistors. This is the first demonstration of an all-silicon visible light emitter / bipolar transistor optoelectronic integrated circuit. The LED device fabrication, process integration, and optoelectronic device characteristics are discussed.
also Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623
also Laboratory for Laser Energetics, Department of Physics & Astronomy, and The Institute of Optics, University of Rochester, Rochester NY 14627