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In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

Published online by Cambridge University Press:  22 February 2011

C. Pickering ,
D.A.O. Hope ,
W.Y. Leong ,
D.J. Robbins  and
R. Greef
C. Pickering
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
D.A.O. Hope
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
W.Y. Leong
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
D.J. Robbins
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, UK
R. Greef
Affiliation:
Dept of Chemistry, University of Southampton, Southampton, S09 5NH, UK
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Abstract

In-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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