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InGaAs/GaAs Quantum Dot Interdiffusion Induced by Cap Layer Overgrowth

Published online by Cambridge University Press:  10 February 2011

J. Jasinski ,
A. Babinski ,
M. Czeczott  and
R. Bozek
J. Jasinski
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Institute of Experimental Physics, Warsaw University, 00-681 Warsaw, Poland
A. Babinski
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warsaw, Poland
M. Czeczott
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warsaw, Poland
R. Bozek
Affiliation:
Institute of Experimental Physics, Warsaw University, 00-681 Warsaw, Poland
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Abstract

The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

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