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The Influence of Tunneling Transitions on Recombination and Photoconductivity of a-Si:H

Published online by Cambridge University Press:  25 February 2011

B. Cleve  and
P. Thomas
B. Cleve
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps Universitat, Renthof 5, D-3550 Marburg, FRG
P. Thomas
Affiliation:
Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps Universitat, Renthof 5, D-3550 Marburg, FRG
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Abstract

Spin dependent photoconductivity measurements provide evidence for the existence of tunneling transitions from localized tail states into the dangling bond recombination centers. These processes can be included approximately into the conventional model based on rate equations. Satisfactory values for the activation energy of the photoconductivity at low temperatures are obtained. Our model produces thermal quenching and an enhancement of the photoconductivity with rising dark Fermi level.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 317
Copyright
Copyright © Materials Research Society 1990

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References

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