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Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials

Published online by Cambridge University Press:  03 September 2012

Jun Wu ,
Thomas Fannin ,
Michael Dudley ,
Vijay Shastry  and
Peter Anderson
Jun Wu
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Thomas Fannin
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Vijay Shastry
Affiliation:
Dept. of Materials Science & Engineering, Ohio State University, Columbus Ohio 43210
Peter Anderson
Affiliation:
Dept. of Materials Science & Engineering, Ohio State University, Columbus Ohio 43210
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Abstract

Analysis of the white beam synchrotron x-ray topographic contrast behavior of screw dislocations comprising slip bands in silicon, observed under low absorption conditions, is presented. For both individual and groups of dislocations, observed “Direct Image” contrast at the surface intersections of dislocation lines, on reflections for which g·b=0, could be accounted for using equi-misorientation contour analysis using displacement fields which take surface relaxation effects into account. This contrast is shown to be a sensitive function of the local stress environment. In addition, diffuse area contrast observed within and in the vicinity of slip bands on such reflections is also observed to be very sensitive to long range strain fields associated with adjacent slip bands and other defects in the local slip band environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 265
Copyright
Copyright © Materials Research Society 1992

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References

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