Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-02-05T06:37:41.895Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire

Published online by Cambridge University Press:  15 February 2011

A. Y. Polyakov ,
M. Shin ,
S. J. Pearton ,
M. Skowronski ,
D. W. Greve  and
J. A. Freitas
A. Y. Polyakov
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890, polyakov@andrew.cmu.edu
M. Shin
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890, polyakov@andrew.cmu.edu
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, 132 Rhines Hall, Gainesville, Florida, FL 32611–6400
M. Skowronski
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890, polyakov@andrew.cmu.edu
D. W. Greve
Affiliation:
Department of Electronic and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213–3890
J. A. Freitas
Affiliation:
Sach/Freeman Assoc. Inc. Landover, MD 20785, Naval Research Lab.: Contract # N00014- 93-C-2227
Get access

Abstract

Hydrogen plasma passivation effects are studied for undoped AlGaN layers grown by MOCVD. Hydrogen treatment at 200°C for lh led to a substantial decrease in carrier concentration accompanied by an increase in electron mobility. The magnitude of the near-band edge absorption tails also dramatically decreased after hydrogen passivation. The effect is explained by pairing of negatively charged hydrogen acceptors with positively charged native donors commonly believed to be related to nitrogen vacancies. The bond strength in such hydrogen complexes increases as the composition of AlGaN moves towards AIN, as revealed by results of post hydrogenation annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 607
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gaskill, D.K., Rowland, L.B. and Doverspike, K., Electrical Transport Properties of AIN, GaN and AlGaN, in Properties of Group III Nitrides, ed. Edgar, J.H. (INSPEC Publications, London, 1994)pp 101–116 Google Scholar
[2] Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Cryst. Growth, 98, 209 (1989)Google Scholar
[3] Zhang, X., Kung, P., Saxler, A, Walker, D., Wang, T.C. and Razhegi, M., Appl. Phys. Lett., 67, 1745 (1995)Google Scholar
[4] Shin, M., Polyakov, A.Y., Skowronski, M., Greve, D.W., Wilson, R.G., Freitas, J.A., to be published in the Proceedings of the MRS Spring Meeting, 1996.Google Scholar
[5] Koide, H. Itoh, N. Sawaki and Akasaki, I., J. Electrochem. Soc., 133, 1956 (1986)Google Scholar
[6] Koide, Y, Itoh, H., Khan, M.R.H., Hiramatsu, K., Sawaki, N. and Akasaki, I., J. Appl. Phys., 61, 4540 (1987)Google Scholar
[7] Yoshida, S. Misawa, and Gonda, S., J.Appl. Phys., 53, 6844 (1982)Google Scholar
[8] Khan, M.A., Bhattarai, A., Kuznia, J.N. and Olson, T., Appl. Phys. Lett., 63, 1214 (1993)Google Scholar
[9] Khan, M.A., Kuznia, J.N., Van Hove, J.M., Pan, N. and Carter, J., Appl. Phys. Lett., 60, 3027 (1992)Google Scholar
[10] Khan, M.A., Chen, Q., Sun, C.J., Yang, J.M., Blasingame, M., Shur, M.S. and Park, H., Appl. Phys. Lett., 68, 514 (1996)Google Scholar
[11] Hydrogen in Compound Semiconductors, ed. Pearton, S.J. (Trans. Tech. Publications, Switzerland, 1994)Google Scholar
[12] Nakamura, S., Senoh, M., Mukai, T., Jpn. J. Appl. Phys., 30, L1708 (1991)Google Scholar
[13] Goldenberg, B., Zook, J.D., Ulmer, R.J., Appl. Phys. Lett., 62, 381 (1993)Google Scholar
[14] Pearton, S.J., Abernathy, C.R., Wisk, P.W., Hobson, W.S. and Ren, F., Appl. Phys. Lett., 63, 1143 (1993)Google Scholar
[15] Brandt, M.S., Johnson, N.M., Molnar, R.J., Singh, R. and Moustakas, T., Appl. Phys. Lett., 64, 2264 (1994)Google Scholar
[16] Loughlin, S. and French, R.H., Optical Functions of AIN, in Properties of Group III Nitrides, ed. Edgar, J.H. (INSPEC Publications, London, 1994) pp 175–189 Google Scholar
[17] Miragliotta, J.A., pp 190–194 Google Scholar
[18] Polyakov, A.Y., Hydrogen Passivation of Ternary and Quaternary III-V Materials, in Hydrogen in Compound Semiconductors, ed. Pearton, S.J. (Trans. Tech Publications, Switzerland, 1994) pp. 295–320 Google Scholar
[19] Pearton, S.J., Corbett, J.W. and Stavola, M., Hydrogen in Crystalline Semiconductors (Springer-Verlag, Heidelberg, 1992)Google Scholar