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The Influence of Dislocations on the Diffusion Behavior of Gold in Silicon

Published online by Cambridge University Press:  21 February 2011

N. A. Stolwijk  and
J. Hölzl
N. A. Stolwijk
Affiliation:
New adress: Universität Münster, Institut für Metallforschung, Domagkstraβe 75, D-4400 Münster, F.R. Germany
J. Hölzl
Affiliation:
Max-Planck-Institut für Metallforschung, Institut für Physik, P.O.Box 800665, D-7000 Stuttgart 80, F.R. Germany
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Abstract

Diffusion of gold in silicon has been studied by means of the spreading-resistance technique on dislocation-free, moderately dislocated and highly dislocated Si crystals. The penetration profiles not only show the general tendency that Au diffusion increases as a function of dislocation density, but also reveal qualitative differences between these three classes of specimens. It is demonstrated how within the framework of the kick-out model from the experimental data detailed information on both Au diffusion and Si self-diffusion can be obtained. In turn, the observed influence of dislocations on the diffusion of Au in Si represents a convincing confirmation of the kick-out mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 137
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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