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Impurity Profiles in InP from Ion Implantation at Elevated Temperatures

Published online by Cambridge University Press:  26 February 2011

P. Kringhoj  and
B. G. Svensson
P. Kringhoj
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus C, Denmark
B. G. Svensson
Affiliation:
The Royal Institute of Technology, Solid State Electronics, P. O. Box 1298, S-164 28 Kista Stockholm, Sweden.
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Abstract

The chemical profiles of Zn, Ge, and Se implanted into InP at elevated temperatures have been measured with secondary ion mass spectrometry and correlated to the implantation damage as deduced from RBS/channeling measurements. An asymmetric broadening of the chemical profiles towards the bulk was found for implantation temperatures above 150°C. This effect is concluded to be due to impurity channeling during implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 835
Copyright
Copyright © Materials Research Society 1992

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References

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