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Improvement of Inp-GaAs-Si Quality by Thermal-Cycle Growth

Published online by Cambridge University Press:  28 February 2011

S.M. Vernon ,
C.J. Keavney ,
E.D. Gagnon ,
N.H. Karam ,
N.M. Haegel  and
V.P. Mazzi
S.M. Vernon
Affiliation:
Spire Corporation, Bedford, MA; M.M. Al–Jassim, Solar Energy Research Institute, Golden, CO
C.J. Keavney
Affiliation:
Spire Corporation, Bedford, MA; M.M. Al–Jassim, Solar Energy Research Institute, Golden, CO
E.D. Gagnon
Affiliation:
Spire Corporation, Bedford, MA; M.M. Al–Jassim, Solar Energy Research Institute, Golden, CO
N.H. Karam
Affiliation:
Spire Corporation, Bedford, MA; M.M. Al–Jassim, Solar Energy Research Institute, Golden, CO
N.M. Haegel
Affiliation:
Material Science Dept., UCLA; and C.R. Wie, Electrical and Computer Engineering Dept., SUNY at Buffalo
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Abstract

Single-crystal films of InP have been deposited on GaAs, GaAs-coated Si, and InP substrates by metalorganic chemical vapor deposition (MOCVD). Defect-reduction schemes involving various thermal annealing recipes have been developed and characterized. Material quality has been assessed by a variety of methods including transmission electron microscopy, X-ray rocking curve analysis, low-temperature photoluminescence, lifetime measurements, Hall-effect measurements, electrochemical profiling, and Nomarski microscopy. The use of either a thermal-cycle-growth or a thermal-cycle-annealing process leads to heteroepitaxial InP film quality which is significantly improved over that of its as-grown state, with the thermal-cycle growth appearing to be the more effective technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 163
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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