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Improvement of Gate Oxide Integrity Characteristics in CZ-Grown Si Crystals by H2 annealing

Published online by Cambridge University Press:  03 September 2012

N. Adachi ,
H. Nishikawa ,
Y. Komatsu ,
H. Hourai ,
M. Sano  and
T. Shigematsu
N. Adachi
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratories, 2201 Kouhoku, Kishima, Saga 849–05, Japan
H. Nishikawa
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratories, 2201 Kouhoku, Kishima, Saga 849–05, Japan
Y. Komatsu
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratories, 2201 Kouhoku, Kishima, Saga 849–05, Japan
H. Hourai
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratories, 2201 Kouhoku, Kishima, Saga 849–05, Japan
M. Sano
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratories, 2201 Kouhoku, Kishima, Saga 849–05, Japan
T. Shigematsu
Affiliation:
Kyushu Electronic Metal Corporation, Semiconductor Research Laboratories, 2201 Kouhoku, Kishima, Saga 849–05, Japan
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Abstract

The mechanism of improvement in gate oxide integrity (GOI) characteristics by H2 annealing in CZ-grown Silicon wafers was investigated. Grown-in defects that are considered to degrade GOI and which can be detected correlatively as 0.1 μm level size pits appearing after SC-1 cleaning, decrease drastically by H2 annealing, while other inert gases, i.e., N2 and Ar, do not exhibit such effect. Besides, H2 annealing shrinks or extinguishes oxygen precipitates significantly, while other gases do not. On the other hand, oxygen outdiffusion is exactly the same among H2, N2 and Ar annealing. From these results, it was concluded that the dominant mechanism for GOI characteristics improvement by H2 annealing is due to decomposition of the grown-in defects having Si-O bonding by the reduction reaction between Si-O bonding and hydrogen, and not due to a mere thermal decomposition enhanced by oxygen outdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 815
Copyright
Copyright © Materials Research Society 1992

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References

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